Three-dimensional memory devices having through array contacts and methods for forming the same

ABSTRACT

Embodiments of three-dimensional (3D) memory devices having through array contacts (TACs) and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate. A channel structure extending vertically through the dielectric stack is formed. A first opening extending vertically through the dielectric stack is formed. A spacer is formed on a sidewall of the first opening. A TAC extending vertically through the dielectric stack is formed by depositing a conductor layer in contact with the spacer in the first opening. A slit extending vertically through the dielectric stack is formed after forming the TAC. A memory stack including a plurality of conductor/dielectric layer pairs is formed on the substrate by replacing, through the slit, the sacrificial layers in the dielectric/sacrificial layer pairs with a plurality of conductor layers.

CROSS REFERENCE TO RELATED APPLICATION

This application is divisional of U.S. application Ser. No. 16/149,103,filed on Oct. 1, 2018, entitled “THREE-DIMENSIONAL MEMORY DEVICES HAVINGTHROUGH ARRAY CONTACTS AND METHODS FOR FORMING THE SAME,” which iscontinuation of International Application No. PCT/CN2018/101482, filedon Aug. 21, 2018, entitled “THREE-DIMENSIONAL MEMORY DEVICES HAVINGTHROUGH ARRAY CONTACTS AND METHODS FOR FORMING THE SAME,” both of whichare hereby incorporated by reference in their entireties.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

SUMMARY

Embodiments of 3D memory devices and fabrication methods thereof aredisclosed herein.

In one example, a method for forming a 3D memory device is disclosed. Adielectric stack including a plurality of dielectric/sacrificial layerpairs is formed on a substrate. A channel structure extending verticallythrough the dielectric stack is formed. A first opening extendingvertically through the dielectric stack is formed. A spacer is formed ona sidewall of the first opening. A through array contact (TAC) extendingvertically through the dielectric stack is formed by depositing aconductor layer in contact with the spacer in the first opening. A slitextending vertically through the dielectric stack is formed afterforming the TAC. A memory stack including a plurality ofconductor/dielectric layer pairs is formed on the substrate byreplacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.

In another example, a method for forming a 3D memory device isdisclosed. A dielectric stack including a plurality ofdielectric/sacrificial layer pairs is formed on a substrate. A channelstructure extending vertically through the dielectric stack is formed. Adummy channel structure extending vertically through the dielectricstack is formed. A first opening through the dielectric stack and asecond opening outside of the dielectric stack are simultaneouslyetched. A first spacer on a sidewall of the first opening and a secondspacer on a sidewall of the second opening are simultaneously formed. Aconductor layer is deposited (i) filling in the first opening to form aTAC and (ii) filling in the second opening to form a peripheral contact.A slit extending vertically through the dielectric stack is formed afterforming the TAC and peripheral device. A memory stack including aplurality of conductor/dielectric layer pairs is formed on the substrateby replacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.

In still another example, a method for forming a 3D memory device isdisclosed. A dielectric stack including a plurality ofdielectric/sacrificial layer pairs is formed on a substrate. A channelstructure extending vertically through the dielectric stack is formed. Afirst opening through the dielectric stack, a second opening outside ofthe dielectric stack, and a third opening through the dielectric stackare simultaneously etched. A lateral dimension of the third opening issmaller than lateral dimensions of the first and second openings. Adielectric layer is deposited (i) fully filling in the third opening toform a dummy channel structure and (ii) partially filling in the firstopening and the second opening. Parts of the dielectric layer that aredeposited on a bottom surface of the first opening and on a bottomsurface of the second opening are removed. A conductor layer isdeposited (i) filling in the first opening to form a TAC and (ii)filling in the second opening to form a peripheral contact. A slitextending vertically through the dielectric stack is formed afterforming the TAC and peripheral device. A memory stack including aplurality of conductor/dielectric layer pairs is formed on the substrateby replacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.

In a different example, a 3D memory device includes a substrate, amemory stack on the substrate including a plurality ofconductor/dielectric layer pairs, a channel structure extendingvertically through the conductor/dielectric layer pairs in the memorystack, a TAC extending vertically through the conductor/dielectric layerpairs in the memory stack, and a dummy channel structure fully filledwith a dielectric layer and extending vertically through theconductor/dielectric layer pairs in the memory stack.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a cross-section of an exemplary 3D memory device,according to some embodiments of the present disclosure.

FIGS. 2A-2E illustrate an exemplary fabrication process for formingchannel structures of a 3D memory device, according to some embodimentsof the present disclosure.

FIGS. 3A-3F illustrate exemplary fabrication processes for forming TACs,peripheral contacts, and dummy channel structures of a 3D memory device,according to various embodiments of the present disclosure.

FIGS. 4A-4C illustrate another exemplary fabrication process for formingTACs, peripheral contacts, and dummy channel structures of a 3D memorydevice, according to some embodiments of the present disclosure.

FIGS. 5A-5B illustrate an exemplary fabrication process for forming aslit structure and word line contacts of a 3D memory device, accordingto some embodiments of the present disclosure.

FIG. 6 is a flowchart of an exemplary method for forming a 3D memorydevice, according to some embodiments.

FIG. 7A is a flowchart of an exemplary method for forming a spacer on asidewall of an opening, according to some embodiments of the presentdisclosure.

FIG. 7B is a flowchart of another exemplary method for forming a spaceron a sidewall of an opening, according to some embodiments of thepresent disclosure.

FIG. 8 is a flowchart of another exemplary method for forming a 3Dmemory device, according to some embodiments of the present disclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend laterally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically oriented strings of memory cell transistors(referred to herein as “memory strings,” such as NAND memory strings) ona laterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to the lateralsurface of a substrate.

In some 3D memory devices, interconnects can include through arraycontacts (TACs) for providing vertical interconnects between the stackedmemory array device and peripheral device (e.g., for power bus and metalrouting), thereby reducing metal levels and shrinking die size. TACs canbe formed within barrier structures, which preserves a dielectric stackregion within a memory stack for ease of etching the openings of theTACs. However, the regions enclosed by the barrier structures take uplarge area in the core array region where memory strings can be formedand also have a negative impact on the resistance of word lines.Moreover, the existing fabrication processes for forming the barrierstructures become more challenging for the next-generation 3D memorydevices (e.g., having 128 levels or more), which have less processmargin.

Various embodiments in accordance with the present disclosure provide a3D memory device having TACs not enclosed by barrier structures, whichresolves the above-noted issues associated with the barrier structures.For example, by removing the barrier structures, the areas for TACs canbe reduced while keeping their functions, thereby increasing memory celldensity and decreasing process cost. More process margin can also beobtained due to the elimination of etching and alignment steps formaking the barrier structures, which enables high process extendibilityfor both current and future generations of 3D memory devices. Moreover,various embodiments of methods for forming the 3D memory devicedisclosed herein can allow TACs to be formed in the same fabricationprocess(es) for making other structures (e.g., peripheral contactsand/or dummy channel structures) and thus, further simplify thefabrication flow and reduce process cost.

FIG. 1 illustrates a cross-section of an exemplary 3D memory device 100,according to some embodiments of the present disclosure. 3D memorydevice 100 can include a substrate 102, which can include silicon (e.g.,single crystalline silicon), silicon germanium (SiGe), gallium arsenide(GaAs), germanium (Ge), silicon on insulator (SOI), or any othersuitable materials. In some embodiments, substrate 102 is a thinnedsubstrate (e.g., a semiconductor layer), which was thinned from a normalthickness by grinding, wet/dry etching, chemical mechanical polishing(CMP), or any combination thereof.

3D memory device 100 can include a memory stack 104 above substrate 102.Memory stack 104 can be a stacked storage structure through which memorystrings (e.g., NAND memory strings 106) are formed. In some embodiments,memory stack 104 includes a plurality of conductor/dielectric layerpairs stacked vertically above substrate 102. Each conductor/dielectriclayer pair can include a conductor layer 110 and a dielectric layer 112.That is, memory stack 104 can include interleaved conductor layers 110and dielectric layers 112 stacked vertically. As shown in FIG. 1, eachNAND memory string 106 extends vertically through interleaved conductorlayers 110 and dielectric layers 112 in memory stack 104. In someembodiments, 3D memory device 100 is a NAND Flash memory device in whichmemory cells are provided at intersections of NAND memory strings 106and conductor layers 110 (functioning as word lines) of 3D memory device100. The number of conductor/dielectric layer pairs in memory stack 104(e.g., 32, 64, 96, or 128) can set the number of memory cells in 3Dmemory device 100.

Conductor layers 110 can each have the same thickness or have differentthicknesses. Similarly, dielectric layers 112 can each have the samethickness or have different thicknesses. Conductor layers 110 caninclude conductive materials including, but not limited to, tungsten(W), cobalt (Co), copper (Cu), aluminum (Al), polycrystalline silicon(polysilicon), doped silicon, silicides, or any combination thereof.Dielectric layers 112 can include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride, orany combination thereof. In some embodiments, conductor layers 110include metals, such as W, and dielectric layers 112 include siliconoxide. It is understood that a silicon oxide film (not shown), such asan in-situ steam generation (ISSG) silicon oxide, is formed betweensubstrate 102 (e.g., a silicon substrate) and memory stack 104,according to some embodiments.

It is noted that x, y, and z axes are added to FIG. 1 to furtherillustrate the spatial relationship of the components in 3D memorydevice 100. The x-, y-, and z-directions are perpendicular to oneanother. Substrate 102 includes two lateral surfaces (e.g., a topsurface and a bottom surface) extending laterally in the x-direction andy-direction (the lateral direction) in the x-y plane. As used herein,whether one component (e.g., a layer or a device) is “on,” “above,” or“below” another component (e.g., a layer or a device) of a semiconductordevice (e.g., 3D memory device 100) is determined relative to thesubstrate (e.g., substrate 102) of the semiconductor device in thez-direction (the vertical direction) when the substrate is positioned inthe lowest plane of the semiconductor device in the z-direction. Thesame notion for describing spatial relationship is applied throughoutthe present disclosure.

In some embodiments, 3D memory device 100 is part of a monolithic 3Dmemory device, in which the components of the monolithic 3D memorydevice (e.g., memory cells and peripheral devices) are formed on asingle substrate (e.g., substrate 102). Peripheral devices 111, such asany suitable digital, analog, and/or mixed-signal peripheral circuitsused for facilitating the operation of 3D memory device 100, can beformed on substrate 102 as well, outside of memory stack 104. Peripheraldevice 111 can be formed “on” substrate 102, where the entirety or partof peripheral device 111 is formed in substrate 102 (e.g., below the topsurface of substrate 102) and/or directly on substrate 102. Peripheraldevice 111 can include one or more of a page buffer, a decoder (e.g., arow decoder and a column decoder), a sense amplifier, a driver, a chargepump, a current or voltage reference, or any active or passivecomponents of the circuits (e.g., transistors, diodes, resistors, orcapacitors). Isolation regions (e.g., shallow trench isolations (STIs))and doped regions (e.g., source regions and drain regions of thetransistors) can be formed in substrate 102 as well, outside of memorystack 104.

As shown in FIG. 1, memory stack 104 can include an inner region 116(also known as a “core array region”) and an outer region 118 (alsoknown as a “staircase region”). In some embodiments, inner region 116 isthe center region of memory stack 104 where an array of NAND memorystrings 106 are formed through the conductor/dielectric layer pairs, andouter region 118 is the remaining region of memory stack 104 surroundinginner region 116 (including the sides and edges) without NAND memorystrings 106.

As shown in FIG. 1, each NAND memory string 106 can include a channelstructure 108 extending vertically through the conductor/dielectriclayer pairs in inner region 116 of memory stack 104. Channel structure108 can include a channel hole filled with semiconductor materials(e.g., forming a semiconductor channel) and dielectric materials (e.g.,forming a memory film). In some embodiments, the semiconductor channelincludes silicon, such as amorphous silicon, polysilicon, or singlecrystalline silicon. In some embodiments, the memory film is a compositelayer including a tunneling layer, a storage layer (also known as a“charge trap/storage layer”), and a blocking layer. Each NAND memorystring 106 can have a cylinder shape (e.g., a pillar shape). Thesemiconductor channel, tunneling layer, storage layer, and blockinglayer are arranged along a direction from the center toward the outersurface of the pillar in this order, according to some embodiments. Thetunneling layer can include silicon oxide, silicon oxynitride, or anycombination thereof. The storage layer can include silicon nitride,silicon oxynitride, silicon, or any combination thereof. The blockinglayer can include silicon oxide, silicon oxynitride, high dielectricconstant (high-k) dielectrics, or any combination thereof.

In some embodiments, NAND memory strings 106 include a plurality ofcontrol gates (each being part of a word line/conductor layer 110) forNAND memory strings 106. Conductor layer 110 in eachconductor/dielectric layer pair can function as a control gate formemory cells of NAND memory string 106. Conductor layer 110 can includemultiple control gates for multiple NAND memory strings 106 and canextend laterally as a word line ending in outer region 118 of memorystack 104.

In some embodiments, NAND memory string 106 includes two plugs 117 and119 at a respective end in the vertical direction. Each plug 117 or 119can be in contact with a respective end of channel structure 108. Plug117 can include a semiconductor material, such as silicon, that isepitaxially grown from substrate 102. Plug 117 can function as thechannel controlled by a source select gate of NAND memory string 106.Plug 117 can be at the lower end of NAND memory string 106 and incontact with channel structure 108 (e.g., on the upper end of channelstructure 108). As used herein, the “upper end” of a component (e.g.,NAND memory string 106) is the end father away from substrate 102 in thez-direction, and the “lower end” of the component (e.g., NAND memorystring 106) is the end closer to substrate 102 in the z-direction whensubstrate 102 is positioned in the lowest plane of 3D memory device 100.

Plug 119 can include semiconductor materials (e.g., polysilicon) orconductor materials (e.g., metals). In some embodiments, plug 119includes an opening filled with titanium/titanium nitride (Ti/TiN as abarrier layer) and tungsten (as a conductor). By covering the upper endof channel structure 108 during the fabrication of 3D memory device 100,plug 119 can function as an etch stop layer to prevent etching ofdielectrics filled in channel structure 108, such as silicon oxide andsilicon nitride. In some embodiments, plug 119 functions as the drain ofNAND memory string 106.

In some embodiments, memory stack 104 includes a lower memory deck 120disposed on substrate 102 and an upper memory deck 122 disposed abovelower memory deck 120. A joint layer 124 can be disposed verticallybetween and electrically isolate lower memory deck 120 and upper memorydeck 122. Each of lower and upper memory deck 120 and 122 can have thesame or different number of conductor/dielectric layer pairs. Jointlayer 124 can include dielectrics, such as silicon oxide. By separatingmemory stack 104 into lower and upper memory decks 120 and 122, or evenmore memory decks in some embodiments, channel structure 108 of NANDmemory string 106 can be jointed by multiple channel structures, each ofwhich is separately formed through a respective memory deck, to increaseprocess yield. As shown in FIG. 1, channel structure 108 of NAND memorysting 106 includes a lower channel structure 126 extending verticallythrough lower memory deck 120 and an upper channel structure 128extending vertically through upper memory deck. In some embodiments, aninter-deck plug 130 is disposed vertically between and in contact withlower channel structure 126 and upper channel structure 128. Inter-deckplug 130 can include semiconductor materials, such as polysilicon, andjoint (e.g., electrically connect) lower and upper channel structures126 and 128 to form channel structure 108. That is, NAND memory string106 can include plug 117, lower channel structure 126, inter-deck plug130, upper channel structure 128, and plug 119 from bottom to top inthis order.

In some embodiments, 3D memory device 100 further includes slitstructures 132. Each slit structure 132 can extend vertically throughthe conductor/dielectric layer pairs in memory stack 104. Slit structure132 can also extend laterally (e.g., in the y-direction) to separatememory stack 104 into multiple blocks. Slit structure 132 can include anopening (slit) filled with conductive materials including, but notlimited to, tungsten (W), cobalt (Co), copper (Cu), aluminum (Al),silicides, or any combination thereof. Slit structure 132 can furtherinclude a spacer having dielectric materials, such as silicon oxide,laterally between the filled conductive materials and memory stack 104to electrically insulate the filled conductive materials fromsurrounding conductor layers 110 in memory stack 104. As a result, slitstructures 132 can separate 3D memory device 100 into multiple memoryblocks and/or memory fingers.

In some embodiments, slit structure 132 functions as the source contactfor NAND memory strings 106 in the same memory block or the same memoryfinger that share the same array common source. Slit structure 132 canthus be referred to as a “common source contact” of multiple NAND memorystrings 106. In some embodiments, substrate 102 includes a doped region134 (including p-type or n-type dopants at a desired doping level), andthe lower end of slit structure 132 is in contact with doped region 134of substrate 102. Slit structure 132 thus can electrically connect toNAND memory strings 106 by doped region 134.

As shown in FIG. 1, 3D memory device 100 further includes TACs 136 eachextending vertically through the conductor/dielectric layer pairs inmemory stack 104. Each TAC 136 can extend vertically through interleavedconductor layers 110 and dielectric layers 112. In some embodiments, TAC136 can extend through the entire thickness of memory stack 104, (e.g.,all the conductor/dielectric layer pairs in the vertical direction). Insome embodiments, TAC 136 further extends through at least part ofsubstrate 102. TAC 136 can carry electrical signals from and/or to 3Dmemory device 100, such as part of the power bus, with shorteninterconnect routing. In some embodiments, TAC 136 can provideelectrical connections between 3D memory device 100 and peripheraldevice 111 and/or between back-end-of-line (BEOL) interconnects (notshown) and peripheral device 111. TAC 136 can also provide mechanicalsupport to memory stack 104.

TAC 136 can include a vertical opening through memory stack 104 and thatis filled with filling materials. In some embodiments, TAC 136 includesa spacer 138 on a sidewall of the opening and a conductor layer 140 incontact with spacer 138 in the opening. Conductor layer 140 can includeconductive materials, including, but not limited to, W, Co, Cu, Al,doped silicon, silicides, or any combination thereof. Spacer 138 canelectrically insulate conductor layer 140 of TAC 136 from surroundingconductor layers 110 in memory stack 104. In some embodiments, TAC 136has a substantially circular shape in the plan view, and conductor layer140 and spacer 138 are disposed radially from the center of TAC 136 inthis order. Spacer 138 of TAC 136 can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, or any combination thereof.

As shown in FIG. 1, at least on one side in the lateral direction (e.g.,in the y-direction), outer region 118 of memory stack 104 can include astaircase structure 142. In some embodiments, another staircasestructure (not shown) is disposed on the opposite side of memory stack104 in the y-direction. Each “level” of staircase structure 142 caninclude one or more conductor/dielectric layer pairs, each includingconductor layer 110 and dielectric layer 112. The top layer in eachlevel of staircase structure 142 can be conductor layer 110 forinterconnection in the vertical direction. In some embodiments, each twoadjacent levels of staircase structure 142 are offset by a nominallysame distance in the vertical direction and a nominally same distance inthe lateral direction. For each two adjacent levels of staircasestructure 142, the first level (and conductor layer and dielectric layertherein) that is closer to substrate 102 can extend laterally furtherthan the second level (and conductor layer and dielectric layertherein), thereby forming a “landing area” on the first level forinterconnection in the vertical direction.

Staircase structure 142 can be used for landing word line contacts 144and/or for balancing load in certain processes during fabrication (e.g.,etching and chemical mechanical polishing (CMP)) by dummy channelstructures 146 therethrough. The lower end of each word line contact 144can be in contact with top conductor layer 110 (word line) in arespective level of staircase structure 142 to individually address acorresponding word line of 3D memory device 100. Word line contact 144can include an opening (e.g., a via hole or a trench) extending verticalthrough one or more dielectric layers and filled with conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof.

Dummy channel structure 146 can extend vertically through memory stack104 and have a vertical opening filled with the same materials as thosein channel structure 108. Different from channel structures 108, acontact is not formed on dummy channel structure 146 to provideelectrical connections with other components of 3D memory device 100,according to some embodiments. In some embodiments, dummy channelstructure 146 is fully filled with dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride, orany combination thereof. Thus, dummy channel structures 146 cannot beused for forming memory cells in 3D memory device 100. Instead, dummychannel structures 146 can provide mechanical support to the memoryarray structures, e.g., memory stack 104. Although dummy channelstructures 146 are disposed in outer region 118 of memory stack 104 asshown in FIG. 1, it is understood that dummy channel structures 146 canbe formed in inner region 116 of memory stack 104 as well. In someembodiments, dummy channel structure 146 is fully filled with adielectric layer, such as a silicon oxide layer, and extends verticallythrough the conductor/dielectric layer pairs in memory stack 104, eitherin inner region 116 or in outer region 118.

As shown in FIG. 1, 3D memory device 100 can further include peripheralcontacts 148 extending vertically through one or more dielectric layersand in contact with peripheral devices 111 outside of memory stack 104.Peripheral contact 148 can provide electrical connections withperipheral devices 111. Peripheral contact 148 can include a verticalopening filled with filling materials. In some embodiments, similar toTAC 136, peripheral contact 148 includes a spacer 150 on a sidewall ofthe opening and a conductor layer 152 in contact with spacer 150 in theopening. Conductor layer 152 can include conductive materials,including, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. In some embodiments, peripheral contact 148has a substantially circular shape in the plan view, and conductor layer152 and spacer 150 are disposed radially from the center of peripheralcontact 148 in this order. Spacer 150 of peripheral contact 148 caninclude dielectric materials including, but not limited to, siliconoxide, silicon nitride, silicon oxynitride, or any combination thereof.In some embodiments, spacer 150 of peripheral contact 148 and spacer 138of TAC 136 have nominally the same thickness in the lateral direction(e.g., radial direction). In some embodiments, both spacer 150 ofperipheral contact 148 and spacer 138 of TAC 136 include silicon oxide.

It is understood that 3D memory device 100 can include additionalcomponents and structures not shown in FIG. 1 including, but not limitedto, other local contacts and interconnects in one or more BEOLinterconnect layers above memory stack 104 and/or below substrate 102.

FIGS. 2A-2E illustrate an exemplary fabrication process for formingchannel structures of a 3D memory device, according to some embodimentsof the present disclosure. FIGS. 3A-3F illustrate exemplary fabricationprocesses for forming TACs, peripheral contacts, and dummy channelstructures of a 3D memory device, according to various embodiments ofthe present disclosure. FIGS. 4A-4C illustrate another exemplaryfabrication process for forming TACs, peripheral contacts, and dummychannel structures of a 3D memory device, according to some embodimentsof the present disclosure. FIGS. 5A-5B illustrate an exemplaryfabrication process for forming a slit structure and word line contactsof a 3D memory device, according to some embodiments of the presentdisclosure. FIG. 6 is a flowchart of an exemplary method 600 for forminga 3D memory device, according to some embodiments. FIG. 8 is a flowchartof another exemplary method 800 for forming a 3D memory device,according to some embodiments of the present disclosure. Examples of the3D memory device depicted in FIGS. 2-6 and 8 include 3D memory device100 depicted in FIG. 1. FIGS. 2-6 and 8 will be described together. Itis understood that the operations shown in methods 600 and 800 are notexhaustive and that other operations can be performed as well before,after, or between any of the illustrated operations. Further, some ofthe operations may be performed simultaneously, or in a different orderthan shown in FIGS. 6 and 8.

Referring to FIG. 6, method 600 starts at operation 602, in which adielectric stack including a plurality of dielectric/sacrificial layerpairs is formed on a substrate. The substrate can be a siliconsubstrate. In some embodiments, a lower dielectric deck is formed first,followed by the formation of a joint layer. An upper dielectric deck canthen be formed on the joint layer to form the dielectric stack. Method600 proceeds to operation 604, as illustrated in FIG. 6, in which achannel structure extending vertically through the dielectric stack isformed. In some embodiments, a lower channel structure extendingvertically through the lower dielectric deck is formed. An inter-deckplug can then be formed on the lower channel structure in the jointlayer. Once the upper dielectric deck is formed, an upper channelstructure extending vertically through the upper dielectric deck can beformed and jointed with the lower channel structure by the inter-deckplug, thereby forming the channel structure. In some embodiments, astaircase structure is formed at one side of the dielectric stack.

As illustrated in FIG. 2A, a lower dielectric deck 204 including aplurality of dielectric/sacrificial layer pairs is formed on a siliconsubstrate 202. In some embodiments, sacrificial layers 206 anddielectric layers 208 are alternatingly deposited by one or more thinfilm deposition processes including, but not limited to, physical vapordeposition (PVD), chemical vapor deposition (CVD), atomic layerdeposition (ALD), or any combination thereof. In some embodiments,sacrificial layers 206 include silicon nitride, and dielectric layers208 include silicon oxide. It is understood that the sequence ofdepositing sacrificial layers 206 and dielectric layers 208 is notlimited. The deposition can start with sacrificial layer 206 ordielectric layer 208 and can end with sacrificial layer 206 ordielectric layer 208.

As illustrated in FIG. 2B, an array of lower channel structures 210 areformed, each of which extends vertically through interleaved sacrificiallayers 206 and dielectric layers 208 in lower dielectric deck 204. Insome embodiments, fabrication processes to form lower channel structure210 include forming a channel hole through interleaved sacrificiallayers 206 and dielectric layers 208 in lower dielectric deck 204 usingdry etching/and or wet etching, such as deep reactive-ion etching(DRIE), followed by filling the channel hole with a plurality of layers,such as a dielectric layer and a semiconductor layer, using thin filmdeposition processes. In some embodiments, the dielectric layer is acomposite dielectric layer, such as a combination of multiple dielectriclayers including, but not limited to, a tunneling layer, a storagelayer, and a blocking layer. The tunneling layer can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, or any combination thereof. The storage layer caninclude materials for storing charge for memory operation. The storagelayer materials can include, but not limited to, silicon nitride,silicon oxynitride, a combination of silicon oxide and silicon nitride,or any combination thereof. The blocking layer can include dielectricmaterials including, but not limited to, silicon oxide or a combinationof silicon oxide/silicon oxynitride/silicon oxide (ONO). The blockinglayer can further include a high-k dielectric layer, such as an aluminumoxide (Al₂O₃) layer. The semiconductor layer can include polysilicon,serving as a semiconductor channel. The semiconductor layer anddielectric layer can be formed by processes such as ALD, CVD, PVD, orany combination thereof.

As illustrated in FIG. 2B, a joint layer 212 is formed on lowerdielectric deck 204 by depositing a dielectric layer, such as a siliconoxide layer, using thin film deposition processes, such as ALD, CVD,PVD, or any combination thereof. An array of inter-deck plugs 214 areformed in joint layer 212 and in contact with array of lower channelstructures 210, respectively. Inter-deck plugs 214 can be formed bypatterning and etching openings through joint layer 212, followed bydeposition of semiconductor materials, such as polysilicon, using thinfilm deposition processes, such as ALD, CVD, PVD, or any combinationthereof.

As illustrated in FIG. 2C, an upper dielectric deck 216 is formed onjoint layer 212 and above lower dielectric deck 204. A dielectric stack218 including lower dielectric deck 204 and upper dielectric deck 216can thus be formed. The same fabrication processes for forming lowerdielectric deck 204 can be used for forming upper dielectric deck 216and thus, are not repeated again.

As illustrated in FIG. 2D, an array of upper channel structures 220 eachextending vertically through upper dielectric deck 216 are formed and incontact with array of inter-deck plugs 214, respectively. An array ofchannel structures 222 each including lower channel structure 210 andupper channel structure 220 that are electrically connected byinter-deck plug 214 are thus formed. The same fabrication processes forforming lower channel structures 210 can be used for forming upperchannel structures 220 and thus, are not repeated.

As illustrated in FIG. 2E, staircase structures 224 are formed on thesides of dielectric stack 218. Staircase structure 224 can be formed bythe so-called “trim-etch” processes, which, in each cycle, trim (e.g.,etching incrementally and inwardly, often from all directions) apatterned photoresist layer, followed by etching the exposed portions ofthe dielectric/sacrificial layer pair using the trimmed photoresistlayer as an etch mask to form one step of staircase structure 224.

Method 600 proceeds to operation 606, as illustrated in FIG. 6, in whicha dummy channel structure extending vertically through the dielectricstack is formed. As illustrated in FIG. 3A, an array of dummy channelstructures 302 are formed through dielectric layer 218. Dummy channelstructure 302 can be formed by first etching an opening throughdielectric stack 218 and/or one or more dielectric layers using wetetching and/or dry etching, such as DRIE. In some embodiments, theopening is then fully filled with a dielectric layer, such as a siliconoxide layer, using one or more thin film deposition processes, such asALD, CVD, PVD, or any combination thereof. In some embodiments, dummychannel structures 302 are formed simultaneously with channel structures222 in the same fabrication steps, such that the opening of each dummychannel structure 302 is filled with at least some of the materialsfilling in channel structures 222.

Method 600 proceeds to operation 608, as illustrated in FIG. 6, in whicha first opening through the dielectric stack and a second openingoutside of the dielectric stack are simultaneously etched. Asillustrated in FIG. 3B, first openings (TAC holes) 304 each extendingvertically through the dielectric/sacrificial layer pairs in dielectricstack 218 are formed by wet etching and/or drying etching of interleaveddielectric layers 208 and sacrificial layers 206 (e.g., silicon nitrideand silicon oxide). In some embodiments, TAC holes 304 are etched usingDRIE. Second openings (peripheral contact holes) 306 can besimultaneously formed by the same wet etching and/or drying etchingprocess, such as DRIE, to etch through one or more dielectric layers(e.g., silicon oxide and/or silicon nitride) outside of dielectric stack218. The depths of TAC hole 304 and peripheral contact hole 306 in thevertical direction can be nominally the same. The lateral dimensions ofTAC hole 304 and peripheral contact hole 306, such as the diameters, canbe nominally the same or different in various embodiments. For example,the diameter of TAC hole 304 is greater than the diameter of peripheralcontact hole 306, according to some embodiments.

As shown in FIG. 3B, TAC hole 304 and peripheral contact hole 306 canreach to silicon substrate 202, and the lower end of peripheral contacthole 306 can be in contact with a peripheral device 307 formed onsilicon substrate 202. In some embodiments, peripheral device 307includes transistors, which can be formed by a plurality of processesincluding, but not limited to, photolithography, dry/wet etch, thin filmdeposition, thermal growth, implantation, CMP, and any other suitableprocesses. In some embodiments, doped regions are formed in siliconsubstrate 202 by ion implantation and/or thermal diffusion, whichfunction, for example, as source regions and/or drain regions of thetransistors. In some embodiments, isolation regions (e.g., STIs) arealso formed in silicon substrate 202 by wet etching and/or dry etchingand thin film deposition processes. The fabrication process for formingperipheral device 307 can occur at any fabrication stage prior to theetching of peripheral contact hole 306.

Method 600 proceeds to operation 610, as illustrated in FIG. 6, in whicha first spacer and a second spacer are simultaneously formed onsidewalls of the first opening and the second opening, respectively.FIG. 7A is a flowchart of an exemplary method for forming a spacer on asidewall of an opening, according to some embodiments. Referring to FIG.7A, at operation 702, to form the first spacer, a dielectric layer isdeposited on the sidewall and bottom surface of the first opening. Atoperation 704, part of the dielectric layer that is deposited on thebottom surface of the first opening is removed. The deposition of thedielectric layer can include ALD, and the removal of the part of thedielectric layer can include anisotropic etching on the bottom surfaceof the first opening.

As illustrated in FIG. 3C, a first spacer 308 is formed on the sidewall,but not the bottom surface, of TAC hole 304. A dielectric layer can befirst deposited into TAC hole 304 using one or more thin film depositionprocesses, such as ALD, CVD, PVD, or any combination thereof, whichcovers the sidewall and bottom surface of TAC hole 304. The part of thedielectric layer deposited on the bottom surface, but not on thesidewall, of TAC hole 304 can then be etched through using “bottompunch” processes. In some embodiments, a silicon oxide layer can bedeposited on the sidewall and bottom surface of TAC hole 304 using ALD,and the part of the silicon oxide layer deposited on the bottom surfaceof TAC hole 304 can be removed using any suitable anisotropic etchingdirected to the bottom surface of TAC hole 304. In one example, a biaswith a sufficient voltage level may be added to DRIE to etch through thesilicon oxide layer on the bottom surface, but not through the sidewall,of TAC hole 304. Second spacer 310 can be simultaneously formed on thesidewall, but not the bottom surface, of peripheral contact hole 306,using the same deposition and bottom punch processes. In someembodiments, the thicknesses of first spacer 308 and second spacer 310are nominally the same in the lateral direction (e.g., radialdirection).

FIG. 7B is a flowchart of another exemplary method for forming a spaceron a sidewall of an opening, according to some embodiments. Referring toFIG. 7B, at operation 706, to form the first spacer on the sidewall ofthe first opening, a plurality of shallow recesses are first formed byremoving parts of the sacrificial layers abutting the sidewall of thefirst opening. At operation 708, a dielectric layer is deposited fillingin the shallow recesses and on the sidewall and a bottom surface of thefirst opening. At operation 710, part of the dielectric layer that isdeposited on the bottom surface of the first opening is removed. Theremoval of the part of the dielectric layer includes isotropic etchingon the sidewall and the bottom surface of the first opening, accordingto some embodiments.

Different from the example illustrated in FIG. 3C in which first spacer308 is formed by ALD deposition and bottom punch processes, FIGS. 3D-3Eillustrate another example in which a first spacer 314 is formed by anydeposition process, followed by an etch-back process. As illustrated inFIG. 3D, parts of sacrificial layers 206 in dielectric stack 218 thatabut the sidewall of TAC hole 304 are removed by wet etching and/or dryetching, such as using a wet etchant for silicon nitride. A plurality ofshallow recesses 312 can then be formed along the sidewall of TAC hole304. The degree of the etching, i.e., the lateral dimension of shallowrecess, can be controlled by the etching rate and/or etching time. Thesacrificial layer partial removal process can provide space for athicker dielectric layer deposition in the next step.

As illustrated in FIG. 3E, a first spacer 314 is formed on the sidewall,but not the bottom surface, of TAC hole 304. A dielectric layer can befirst deposited into TAC hole 304 using one or more thin film depositionprocesses, such as ALD, CVD, PVD, or any combination thereof, whichfills in shallow recesses 312 (as shown in FIG. 3D) and covers thesidewall and bottom surface of TAC hole 304. The part of the dielectriclayer deposited on the bottom surface of TAC hole 304 can be thenremoved using etch-back processes. In some embodiments, isotropicetching can be applied to etch the dielectric layer deposited on boththe sidewall and the bottom surface of TAC hole 304. Because thedielectric layer is substantially thicker along the sidewall (filling inshallow recesses 312) than on the bottom surface, when the part of thedielectric layer on the bottom surface has been etched through, the partof the dielectric layer on the sidewall can be partially etched, leavingfirst spacer 314 covering only the sidewall of TAC hole 304. In otherwords, the thickened dielectric layer along the sidewall is etched-back,leaving a thinner dielectric layer as first spacer 314, according tosome embodiments. The etching rate and/or etching time of any suitableisotropic etching process can be controlled to fully etch through thedielectric layer on the bottom surface of TAC hole 304, but partiallyetch back the dielectric layer on the sidewall of TAC hole 304.

Method 600 proceeds to operation 612, as illustrated in FIG. 6, in whicha conductor layer is deposited in the first opening to form a TAC and inthe second opening to form a peripheral contact. In some embodiments,the conductor layer is a composite layer including an adhesion/barrierlayer and a conductor. As illustrated in FIG. 3F, a conductor layer 316is deposited in TAC hole 304 (as shown in FIGS. 3C-3E) to fill theremaining space of TAC hole 304, thereby forming a TAC 318 extendingvertically through dielectric stack 218. In some embodiments, anadhesion/barrier layer is first formed along first spacer 308/314 bydepositing titanium/titanium nitride (Ti/TiN) or titanium/tantalumnitride (Ta/TaN) using one or more thin film deposition processes, suchas ALD, CVD, PVD, electrochemical depositions, or any combinationthereof. A conductor can then be formed in the remaining space of TAChole 304 by depositing metals, such as tungsten, using one or more thinfilm deposition processes, such as ALD, CVD, PVD, electrochemicaldepositions, or any combination thereof. A conductor layer 320 can besimultaneously formed in peripheral contact hole 306 (as shown in FIGS.3C-3E) to form a peripheral contact 322 in contact with peripheraldevice 307, using the same deposition processes. The excess conductorlayer after deposition can be removed by CMP.

Method 600 proceeds to operation 614, as illustrated in FIG. 6, in whicha slit extending vertically through the dielectric stack is formed afterthe formation of the TAC. Method 600 proceeds to operation 616, asillustrated in FIG. 6, in which a memory stack including a plurality ofconductor/dielectric layer pairs is formed on the substrate byreplacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.In some embodiments, a slit structure is formed by depositing aconductor layer in the slit after the formation of the memory stack. Insome embodiments, a plurality of word line contacts each in contact witha respective one of the conductor layers of the conductor/dielectriclayer pairs in the staircase structure are formed.

As illustrated in FIG. 5A, an opening (slit) can be etched through thedielectric/sacrificial layer pairs in dielectric stack 218 (as shown inFIGS. 3-4). The slit can be formed by wet etching and/or dry etching ofdielectrics (e.g., silicon oxide and silicon nitride). The opening canbe used as the pathway for gate replacement processes that replacesacrificial layers 206 in dielectric stack 218 with conductor layers 502to form a plurality of conductor/dielectric layer pairs. The replacementof sacrificial layers 206 with conductor layers 502 can be performed bywet etching sacrificial layers 206 (e.g., silicon nitride) selective todielectric layers 208 (e.g., silicon oxide) and filling the structurewith conductor layers 502 (e.g., W). Conductor layers 502 can bedeposited by PVD, CVD, ALD, electrochemical depositions, or anycombination thereof. Conductor layers 502 can include conductivematerials including, but not limited to, W, Co, Cu, Al, polysilicon,silicides, or any combination thereof. As a result, after the gatereplacement processes, dielectric stack 218 in FIGS. 3-4 becomes memorystack 504 including the conductor/dielectric layer pairs, i.e.,interleaved conductor layers 502 and dielectric layers 208, on siliconsubstrate 202.

As illustrated in FIG. 5A, a slit structure 506 is formed by filling(e.g., depositing) conductive materials into the slit by PVD, CVD, ALD,electrochemical depositions, or any combination thereof. Slit structure506 can include conductive materials including, but not limited to, W,Co, Cu, Al, polysilicon, silicides, or any combination thereof. In someembodiments, a dielectric layer (e.g., a silicon oxide layer) is formedfirst between the conductive materials of slit structure 506 andconductor layers 502 surrounding slit structure 506 as a spacer. Thelower end of slit structure 506 can be in contact with a doped region507, which can be formed in silicon substrate 202 using ion implantationand/or thermal diffusion.

As illustrated in FIG. 5B, each word line contact 508 is in contact witha respective one of conductor layers 502 of the conductor/dielectriclayer pairs in staircase structure 224. Word line contacts 508 areformed through one or more dielectric layers by first etching verticalopenings (e.g., by wet etching and/or dry etching), followed by fillingthe openings with conductive materials using ALD, CVD, PVD,electrochemical depositions, or any combination thereof. In someembodiments, other conductive materials are filled in the openings tofunction as an adhesion/barrier layer. Etching of dielectric layers toform the openings of word line contacts 508 can be controlled by etchstop at a different material. For example, etching of dielectric layerscan be stopped when reaching to conductor layers 502 in staircasestructure 224.

FIG. 8 is a flowchart of another exemplary method 800 for forming a 3Dmemory device, according to some embodiments of the present disclosure.Operations 802, 804, 814, and 816 are similar to operations 602, 604,614, and 616, respectively, and thus are not repeated. Method 800proceeds to operation 806, as illustrated in FIG. 8, in which a firstopening through the dielectric stack, a second opening outside of thedielectric stack, and a third opening through the dielectric stack aresimultaneously etched. In some embodiments, the lateral dimension (e.g.,diameter) of the third opening is smaller than lateral dimensions of thefirst and second openings. Each of the first, second, and third openingshas a nominally circular shape in the plan view, according to someembodiments.

As illustrated in FIG. 4A, a first opening (TAC hole) 402, a secondopening (peripheral contact hole) 404, and a third opening (dummychannel hole) 406 are simultaneously formed, each of which reaches tosilicon substrate 202. The lower end of peripheral contact hole 404 canbe in contact with a peripheral device 405 formed on silicon substrate202. TAC hole 402 and dummy channel hole 406 can be etched throughinterleaved sacrificial layers 206 and dielectric layers 208 (e.g.,silicon nitride and silicon oxide) in dielectric stack 218 using wetetching and/or dry etching, and peripheral contact hole 404 can besimultaneously etched through one or more dielectric layers (e.g.,silicon oxide) using the same wet etching and/or dry etching process. Insome embodiments, TAC hole 402, peripheral contact hole 404, and dummychannel hole 406 are etched using DRIE at the same time. The depths ofTAC hole 402, peripheral contact hole 404, and dummy channel hole 406 inthe vertical direction can be nominally the same. In some embodiments,each of TAC hole 402, peripheral contact hole 404, and dummy channelhole 406 has a substantially circular shape in the plan view. Thelateral dimensions (e.g., diameters) of TAC hole 402, peripheral contacthole 404, and dummy channel hole 406 can be controlled by patterningprocess and/or etching parameters, such as etching rate and etchingtime. In some embodiments, in the plan view, the diameter of dummychannel hole 406 is smaller than the diameter of TAC hole 402 and thediameter of peripheral contact hole 404. In some embodiments, thediameter of peripheral contact hole 404 is smaller than the diameter ofTAC hole 402 in the plan view.

Method 800 proceeds to operation 808, as illustrated in FIG. 8, in whicha dielectric layer is deposited (i) fully filling in the third openingto form a dummy channel structure and (ii) partially filling in thefirst opening and the second opening. Method 800 proceeds to operation810, as illustrated in FIG. 8, in which parts of the dielectric layerdeposited on the bottom surfaces of the first and second openings areremoved.

As illustrated in FIG. 4B, a dielectric layer (e.g., silicon oxide) isdeposited into TAC hole 402, peripheral contact hole 404, and dummychannel hole 406 using one or more thin film deposition processes, suchas ALD, CVD, PVD, electrochemical depositions, or any combinationthereof. Due to the different lateral dimensions of TAC hole 402,peripheral contact hole 404, and dummy channel hole 406, by controllingthe deposition parameters, such as the deposition rate and/or depositiontime, the deposited dielectric layer can fully fill in dummy channelhole 406 to form a dummy channel structure 408, but only partially fillin TAC hole 402 and peripheral contact hole 404 to form a first spacer410 and a second spacer 412, respectively, on the sidewalls of TAC hole402 and peripheral contact hole 404. Dummy channel structure 408 is thusformed extending vertically through dielectric stack 218. As describedabove, parts of the dielectric layer deposited on the bottom surfaces ofTAC hole 402 and peripheral contact hole 404 can be removed (i.e.,etched through) using the bottom punch process, such as high bias DRIE.As a result, first and second spacers 410 and 412 are formed on thesidewalls, but not the bottom surfaces, of TAC hole 402 and peripheralcontact hole 404, respectively. In some embodiments, the simultaneouslyformed first and second spacers 410 and 412 have nominally the samethickness in the radial direction in the plan view.

Method 800 proceeds to operation 812, as illustrated in FIG. 8, in whicha conductor layer is deposited (i) filling in the first opening to forma TAC and (ii) filling in the second opening to form a peripheralcontact. As illustrated in FIG. 4C, a conductor layer 414 is depositedin TAC hole 402 (as shown in FIG. 4B) to fill the remaining space of TAChole 402, thereby forming a TAC 416 extending vertically throughdielectric stack 218. In some embodiments, an adhesion/barrier layer isfirst formed along first spacer 410 by depositing Ti/TiN or Ta/TaN usingone or more thin film deposition processes, such as ALD, CVD, PVD,electrochemical depositions, or any combination thereof. A conductor canthen be formed in the remaining space of TAC hole 402 by depositingmetals, such as tungsten, using one or more thin film depositionprocesses, such as ALD, CVD, PVD, electrochemical depositions, or anycombination thereof. A conductor layer 418 can be simultaneously formedin peripheral contact hole 404 (as shown in FIG. 4B) to form aperipheral contact 420 in contact with peripheral device 405, using thesame deposition processes. The excess conductor layer after depositioncan be removed by CMP.

According to one aspect of the present disclosure, a method for forminga 3D memory device is disclosed. A dielectric stack including aplurality of dielectric/sacrificial layer pairs is formed on asubstrate. A channel structure extending vertically through thedielectric stack is formed. A first opening extending vertically throughthe dielectric stack is formed. A spacer is formed on a sidewall of thefirst opening. A TAC extending vertically through the dielectric stackis formed by depositing a conductor layer in contact with the spacer inthe first opening. A slit extending vertically through the dielectricstack is formed after forming the TAC. A memory stack including aplurality of conductor/dielectric layer pairs is formed on the substrateby replacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.

In some embodiments, a staircase structure is formed at one edge of thedielectric stack prior to forming the first opening. A plurality of wordline contacts each in contact with a respective one of the conductorlayers of the conductor/dielectric layer pairs in the staircasestructure are formed, according to some embodiments.

In some embodiments, a slit structure is formed by depositing aconductor layer in the slit.

In some embodiments, a dummy channel structure extending verticallythrough the dielectric stack is formed prior to forming the firstopening.

In some embodiments, to form the first opening, the first openingthrough the dielectric stack and a second opening outside of thedielectric stack are simultaneously etched. In some embodiments, to formthe TAC, the conductor layer is deposited in the first opening to formthe TAC and in the second opening to form a peripheral contact.

In some embodiments, to form the spacer on the sidewall of firstopening, a dielectric layer is deposited on the sidewall and a bottomsurface of the first opening, and part of the dielectric layer that isdeposited on the bottom surface of the first opening is removed. Thedeposition of the dielectric layer includes ALD, and the removal of thepart of the dielectric layer includes anisotropic etching on the bottomsurface of the first opening, according to some embodiments.

In some embodiments, to form the spacer on the sidewall of firstopening, a plurality of shallow recesses are formed by removing parts ofthe sacrificial layers abut the sidewall of the first opening, adielectric layer is deposited filling in the shallow recesses and on thesidewall and a bottom surface of the first opening, and part of thedielectric layer that is deposited on the bottom surface of the firstopening is removed. The removal of the part of the dielectric layerincludes isotropic etching on the sidewall and the bottom surface of thefirst opening, according to some embodiments.

In some embodiments, to form the first opening, the first openingthrough the dielectric stack, a second opening outside of the dielectricstack, and a third opening through the dielectric stack aresimultaneously etched. A lateral dimension of the third opening can besmaller than lateral dimensions of the first and second openings.

In some embodiments, to form the spacer on the sidewall of the firstopening, a dielectric layer is deposited (i) fully filling in the thirdopening to form a dummy channel structure and (2) partially filling inthe first opening and the second opening, and parts of the dielectriclayer that are deposited on a bottom surface of the first opening and ona bottom surface of the second opening are removed. Each of the first,second, and third openings can have a nominally circular shape in theplan view.

In some embodiments, the dielectric layers in the dielectric/sacrificiallayer pairs include silicon oxide, the sacrificial layers in thedielectric/sacrificial layer pairs include silicon nitride, and thespacer includes silicon oxide.

According to another aspect of the present disclosure, a method forforming a 3D memory device is disclosed. A dielectric stack including aplurality of dielectric/sacrificial layer pairs is formed on asubstrate. A channel structure extending vertically through thedielectric stack is formed. A dummy channel structure extendingvertically through the dielectric stack is formed. A first openingthrough the dielectric stack and a second opening outside of thedielectric stack are simultaneously etched. A first spacer on a sidewallof the first opening and a second spacer on a sidewall of the secondopening are simultaneously formed. A conductor layer is deposited (i)filling in the first opening to form a TAC and (ii) filling in thesecond opening to form a peripheral contact. A slit extending verticallythrough the dielectric stack is formed after forming the TAC andperipheral device. A memory stack including a plurality ofconductor/dielectric layer pairs is formed on the substrate byreplacing, through the slit, the sacrificial layers in thedielectric/sacrificial layer pairs with a plurality of conductor layers.

In some embodiments, a staircase structure is formed at one edge of thedielectric stack prior to forming the dummy channel structure. Aplurality of word line contacts each in contact with a respective one ofthe conductor layers of the conductor/dielectric layer pairs in thestaircase structure are formed, according to some embodiments.

In some embodiments, a slit structure is formed by depositing aconductor layer in the slit.

In some embodiments, to form the first spacer on the sidewall of thefirst opening, a dielectric layer is deposited on the sidewall and abottom surface of the first opening, and part of the dielectric layerthat is deposited on the bottom surface of the first opening is removed.The deposition of the dielectric layer includes ALD, and the removal ofthe part of the dielectric layer includes anisotropic etching on thebottom surface of the first opening, according to some embodiments.

In some embodiments, to form the spacer on the sidewall of firstopening, a plurality of shallow recesses are formed by removing parts ofthe sacrificial layers abutting the sidewall of the first opening, adielectric layer is deposited filling in the shallow recesses and on thesidewall and a bottom surface of the first opening, and part of thedielectric layer that is deposited on the bottom surface of the firstopening is removed. The removal of the part of the dielectric layerincludes isotropic etching on the sidewall and the bottom surface of thefirst opening, according to some embodiments.

In some embodiments, the dielectric layers in the dielectric/sacrificiallayer pairs include silicon oxide, the sacrificial layers in thedielectric/sacrificial layer pairs include silicon nitride, and thefirst and second spacers include silicon oxide.

According to still another aspect of the present disclosure, a methodfor forming a 3D memory device is disclosed. A dielectric stackincluding a plurality of dielectric/sacrificial layer pairs is formed ona substrate. A channel structure extending vertically through thedielectric stack is formed. A first opening through the dielectricstack, a second opening outside of the dielectric stack, and a thirdopening through the dielectric stack are simultaneously etched. Alateral dimension of the third opening is smaller than lateraldimensions of the first and second openings. A dielectric layer isdeposited (i) fully filling in the third opening to form a dummy channelstructure and (ii) partially filling in the first opening and the secondopening. Parts of the dielectric layer that are deposited on a bottomsurface of the first opening and on a bottom surface of the secondopening are removed. A conductor layer is deposited (i) filling in thefirst opening to form a TAC and (ii) filling in the second opening toform a peripheral contact. A slit extending vertically through thedielectric stack is formed after forming the TAC and peripheral device.A memory stack including a plurality of conductor/dielectric layer pairsis formed on the substrate by replacing, through the slit, thesacrificial layers in the dielectric/sacrificial layer pairs with aplurality of conductor layers.

In some embodiments, a staircase structure is formed at one edge of thedielectric stack prior to etching the first, second, and third openings.A plurality of word line contacts each in contact with a respective oneof the conductor layers of the conductor/dielectric layer pairs in thestaircase structure are formed, according to some embodiments.

In some embodiments, a slit structure is formed by depositing aconductor layer in the slit.

In some embodiments, each of the first, second, and third openings has anominally circular shape in the plan view.

In some embodiments, the dielectric layers in the dielectric/sacrificiallayer pairs includes silicon oxide, the sacrificial layers in thedielectric/sacrificial layer pairs includes silicon nitride, and thedielectric layer filling the first, second, and third openings includesilicon oxide.

According to yet another aspect of the present disclosure, a 3D memorydevice includes a substrate, a memory stack on the substrate including aplurality of conductor/dielectric layer pairs, a channel structureextending vertically through the conductor/dielectric layer pairs in thememory stack, a TAC extending vertically through theconductor/dielectric layer pairs in the memory stack, and a dummychannel structure fully filled with a dielectric layer and extendingvertically through the conductor/dielectric layer pairs in the memorystack.

In some embodiments, the 3D memory device further includes a peripheraldevice on the substrate, and a peripheral contact outside of the memorystack and in contact with the peripheral device.

In some embodiments, each of the TAC and peripheral contact includes aspacer with a nominally same thickness. The dielectric layer in thedummy channel structure and the spacers in the TAC and peripheralcontact include silicon oxide, according to some embodiments.

In some embodiments, the 3D memory device further includes a lowermemory deck on the substrate and an upper memory deck above the lowermemory stack. In some embodiments, the channel structure includes alower channel structure extending vertically through the lower memorydeck, an upper channel structure extending vertically through the uppermemory deck, and an inter-deck plug disposed vertically between and incontact with the lower channel structure and the upper channelstructure.

In some embodiments, the 3D memory device further includes a staircasestructure at one edge of the memory stack, and a plurality of word linecontacts each in contact with a respective one of the conductor layersof the conductor/dielectric layer pairs in the staircase structure.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A three-dimensional (3D) memory device,comprising: a substrate; a memory stack on the substrate comprising aplurality of conductor/dielectric layer pairs; a channel structureextending vertically through the conductor/dielectric layer pairs in thememory stack; and a through array contact (TAC) extending verticallythrough the conductor/dielectric layer pairs in the memory stack,wherein the TAC comprises a conductor layer and a spacer in a pluralityof shallow recesses abutting a sidewall of the TAC.
 2. The 3D memorydevice of claim 1, wherein the spacer is further over the sidewall ofthe TAC.
 3. The 3D memory device of claim 1, wherein the TAC is in aninner region of the memory stack.
 4. The 3D memory device of claim 1,further comprising a dummy channel structure filled with a dielectriclayer and extending vertically through the conductor/dielectric layerpairs in the memory stack.
 5. The 3D memory device of claim 4, whereinthe dielectric layer in the dummy channel structure and the spacer inthe TAC comprise silicon oxide.
 6. The 3D memory device of claim 1,further comprising: a peripheral device on the substrate; and aperipheral contact outside of the memory stack and in contact with theperipheral device.
 7. The 3D memory device of claim 1, furthercomprising a slit structure extending vertically through theconductor/dielectric layer pairs in the memory stack.
 8. The 3D memorydevice of claim 1, wherein the memory stack comprises: a lower memorydeck on the substrate; and an upper memory deck above the lower memorydeck.
 9. The 3D memory device of claim 8, wherein the channel structurecomprises: a lower channel structure extending vertically through thelower memory deck; an upper channel structure extending verticallythrough the upper memory deck; and an inter-deck plug disposedvertically between and in contact with the lower channel structure andthe upper channel structure.
 10. The 3D memory device of claim 1,further comprising: a staircase structure at one side of the memorystack; and a plurality of word line contacts each in contact with arespective one of the conductor layers of the conductor/dielectric layerpairs in the staircase structure.
 11. A three-dimensional (3D) memorydevice, comprising: a substrate; a memory stack on the substratecomprising a plurality of conductor/dielectric layer pairs; a channelstructure extending vertically through the conductor/dielectric layerpairs in the memory stack; and a through array contact (TAC) extendingvertically through the conductor/dielectric layer pairs in the memorystack, wherein the TAC comprises a conductor layer and a spacer over asidewall of the TAC.
 12. The 3D memory device of claim 11, wherein thespacer is further in a plurality of shallow recesses abutting thesidewall of the TAC.
 13. The 3D memory device of claim 11, furthercomprising a dummy channel structure filled with a dielectric layer andextending vertically through the conductor/dielectric layer pairs in thememory stack.
 14. The 3D memory device of claim 11, further comprising:a peripheral device on the substrate; and a peripheral contact outsideof the memory stack and in contact with the peripheral device.
 15. Athree-dimensional (3D) memory device, comprising: a substrate; a memorystack on the substrate comprising a plurality of conductor/dielectriclayer pairs; a channel structure extending vertically through theconductor/dielectric layer pairs in the memory stack; a through arraycontact (TAC) extending vertically through the conductor/dielectriclayer pairs in the memory stack; and a dummy channel structure filledwith a dielectric layer and extending vertically through theconductor/dielectric layer pairs in the memory stack.
 16. The 3D memorydevice of claim 15, further comprising: a peripheral device on thesubstrate; and a peripheral contact outside of the memory stack and incontact with the peripheral device.
 17. The 3D memory device of claim16, wherein each of the TAC and peripheral contact comprises a spacerwith a nominally same thickness.
 18. The 3D memory device of claim 17,wherein the dielectric layer in the dummy channel structure and thespacers in the TAC and peripheral contact comprise silicon oxide. 19.The 3D memory device of claim 15, wherein the memory stack comprises: alower memory deck on the substrate; and an upper memory deck above thelower memory deck.
 20. The 3D memory device of claim 19, wherein thechannel structure comprises: a lower channel structure extendingvertically through the lower memory deck; an upper channel structureextending vertically through the upper memory deck; and an inter-deckplug disposed vertically between and in contact with the lower channelstructure and the upper channel structure.